MDI MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.

MDI MITSUBOSHI DIAMOND INDUSTRIAL  Co.,LTD.
OFFICIAL SITE
DL
Series
All-in-One Machine
Small Footprint
Eco-Friendly

Environmentally friendly
No waste
Fast and high quality

What is Dialogic

What is DiaLogic?

MDI's long-accumulated technologies has
applied to Semiconductor Manufacturing process

The SnB (Scribe & Break) method has been a MDI's proprietary technology since its establishment. We have applied this technology to chip singulation process of cutting-edge semiconductor devices.

This SnB process has solved many of the problems associated with conventional methods and it overcomes high productivity, high precision, low cost, and environmentally friendly semiconductor device manufacturing and environmentally friendly manufacturing of semiconductor devices.

Only one
Technology

4 Values that SnB brings to the table

The SnB process is an abbreviation for "Scribe and Break," a process used to break brittle materials such as glass. It has been widely used to break hard and brittle materials such as liquid crystal glass substrates, and MDI has developed its own scribing wheel to expand the range of application to compound semiconductor materials.

  • No Kerf Loss
    No Kerf Loss
    Improved chip yield with zero kerf loss
  • High Quality
    High Quality
    High quality and high standard
  • High Productivity
    High Productivity
    Efficient and high-speed production
  • Dry Process
    Dry Process
    No water is used at all
No Kerf Loss

No Kerf Loss

Improved chip yield with zero kerf loss

In SnB processing with a scribing wheel, the groove width (part of the plastic deformation area) due to scribing is about 5 μm. Therefore, for semiconductors and electronic components, the street width of the substrate can be made narrower, enabling an increase in the number of products taken per substrate. Street widths of 30 μm or less are also available.

Comparison of kerf loss by process method

Blade Dicing
Kurf 50 μm
Saw Street : 80μm
Laser Stealth Dicing (SD)
Kurf 40% of Thickness
Saw Street : 100-150μm
Laser Ablation
(Full Cut)
Kurf 30 μm
Saw Street : 200μm
SnB
Kurf 0 μm
Saw Street : 30μm
High Quality

High Quality

Since the SnB method use a breaking method, the only damage to the substrate is the processing mark generated by scribing. Since the cross section has a smooth fracture surface, cracks are less likely to occur on the cross section compared to other singulation process methods, and the product (chip) has higher die strength. In the case of a base material with a *crystal structure, the cross section is a cleaved surface and the crystal structure is retained, so side cracks do not occur.

cross-section view

Blade Dicing
Cross Section
Laser Stealth Dicing (SD)
Cross Section
Laser Ablation
(Full Cut)
Cross Section
SnB
Cross Section
Example
  • SiC
    Process : Scribing Wheel
    Cutting Size : 1mm×1mm
    Thickness : 350μm
  • GaAs
    Process : Scribing Wheel
    Cutting Size : 1.5mm×1.5mm
    Thickness : 350μm
  • GaN
    Process : Scribing Wheel
    Cutting Size : 1.5mm×1.5mm
    Thickness : 350μm
  • Glass
    Process : Scribing Wheel
    Cutting Size : 1mm×1mm
    Thickness : 0.36mm
Material
Glass, compound semiconductors (SiC, GaN, Ga2O3, GaAs, InP), ceramics (HTCC, LTCC, MLCC), AIN, Sapphire, etc.
Scribing wheels are made in-house with high quality
Glass scribing tools (wheels) were generally made of cemented carbide.
In order to extend the life of wheels, we developed a wheel based on PCD (sintered diamond) PCD (Polycrystalline Diamond) is made by baking polycrystalline diamond powder under high pressure using a metal such as cobalt as a binder. PCD has various characteristics (physical properties) depending on the grain size of the polycrystalline diamond, the type and ratio of the binder, and the manufacturing method. We have been searching for materials suitable for scribing in terms of hardness and toughness.
We also continue to search for new materials that are more suitable for scribing than PCD from the viewpoint of improving wheel performance.
High Productivity

High Productivity

Fully automatic processing

All-in-One Machine

Full automation system compbined
with both scribe and break unit

Cassette LD/ULD Unit
Cassette loader/unloader unit
  • Capacity : 2 cassettes
A cassette containing wafers is loaded into the loader unit.
Transfer Unit
Transfer Unit
  • Full / Partial Wafer
  • Wafer Outline Measurement
To the scribe unit by the transfer unit.
Scribe Unit
Scribe Unit
  • Scribe
  • Auto Tool Change
  • Automatic Callibration
Scribing process takes place in the scribe unit.
Film Lamination Unit
Film Lamination Unit
  • Protection-film Lamination
To the film lamination unit and a protective film is applied.
Transfer Unit
Transfer Unit
  • Flip Wafer
  • Wafer Outline Measurement
After the wafer is flipped in the transfer unit, it is transferred to the break unit.
Break Unit
Break Unit
  • Break
Breaking process takes in place in the break unit.
Transfer Unit
Transfer Unit
  • Flip Wafer
  • Protection-film De-lamination
After breaking, the wafer is flipped and the protective film is removed by the transfer unit.
FLOW PROCESS FLOW PROCESS FLOW PROCESS FLOW PROCESS FLOW PROCESS FLOW PROCESS

The scribing processing speed of the SnB process is as fast as 100 mm/sec. By increasing the number of substrates processed per hour, the number of equipment required for production can be reduced.

Scribing Speed

5-10mm/sec
Blade Dicing
87.5mm/sec
Laser Stealth Dicing
30mm/sec
Laser Ablation
100mm/sec
Scribe and Break
The smaller the die size,
the more advantageous SnB
becomes.

Number of Die per Wafer

No Die Size Blade Dicing SnB
Saw Street (w) 80 μm 30 μm
1 0.75mm 23,936 pcs 27.144 + 13.4%
2 1.00mm 14,076 pcs 14.076 + 10.1%
3 1.50mm 6,536 pcs 6,964 + 6.5%
Dry Process

Dry Process

The semiconductor manufacturing process requires a lot of water, however, the SnB process is basically a dry process that does not use water. It is an environmentally friendly process that does not use precious water resources, and does not require incidental facilities for cleaning water supply or wastewater treatment, thus reducing costs.

Amount of water used per wafer

0L
Scribe and Break
DIW : 6-7 L/min
Blade Dicing

Lineup

Product Lineup
  • Ring Size
  • Wafer Size
  • Dimensions
  • Weight
  • Power Supply
DL
Series
  • Ring Size
  • 12Inch
  • 8Inch
  • Wafer Size
  • Max.
    300 mm
  • Max.
    200 mm
  • Dimensions
  • 1,760(W)×
    3,350(D)×
    2,035(H) mm
  • 1,580(W)×
    3,090(D)×
    2,035(H) mm
  • Weight
  • 5,500 kg
  • 4,500 kg
  • Power Supply
  • 3 Ph AC200～220V±10%
    0/60 Hz 50 A
DS
Series
  • Ring Size
  • 12Inch
  • 8Inch
  • Wafer Size
  • Max.
    300 mm
  • Max.
    200 mm
  • Dimensions
  • 1,130(W)×
    1,800(D)×
    1,840(H) mm
  • Weight
  • 1,420 kg
  • Power Supply
  • 3 Ph AC200～220 V±10%
    50/60 Hz 20 A
DB
Series
  • Ring Size
  • 12Inch
  • 8Inch
  • Wafer Size
  • Max.
    300 mm
  • Max.
    200 mm
  • Dimensions
  • 1,130(W)×
    1,800(D)×
    1,840(H) mm
  • Weight
  • 1,700 kg
  • Power Supply
  • 3 Ph AC200～220 V±10%
    50/60 Hz 20 A
DR
Series
  • Ring Size
  • 12Inch
  • 8Inch
  • Wafer Size
  • Max.
    150 mm
  • Max.
    100 mm
  • Dimensions
  • 1,450(W)x
    2,150(D)x
    1,850(H) mm
  • 1,400(W)x
    2,100(D)x
    1,850(H) mm
  • Weight
  • 1,600 kg
  • 1,500 kg
  • Power Supply
  • 3 Ph AC200～220 V±10%
    50/60 Hz 40 A